A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions-Reference-Cited by-同舟云学术

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A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions

Published:2017-04 Issue:4 Volume:53 Page:369-375
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Maksimov A. D.,Eistrikh-Geller V. Yu.,Marmalyuk A. A.,Ladugin M. A.,Bagaev T. A.,Gorlachuk P. V.,Yarotskaya I. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1134/S0020168517040124.pdf

Reference20 articles.

1. Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D., and Shelyakin, A.A., Laser diode for remote sensing of methane, Inorg. Mater., 2012, vol. 48, no. 3, pp. 252–257.

2. Samuelson, L., Omling, P., and Grimmeiss, H.G., Alloying mechanisms in MOVPE GaAs1–xPx, J. Cryst. Growth, 1983, vol. 61, pp. 425–426.

3. Leys, M.R., Titze, H., Samuelson, L., and Petruzzello, J., Growth and characterization of strained layers of GaAs1–xPx, J. Cryst. Growth, 1988, vol. 93, p.504.

4. Koukitu, A. and Seki, H., Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductors, J. Cryst. Growth, 1986, vol. 76, pp. 233–242.

5. Seki, H. and Koukitu, A., Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors, J. Cryst. Growth, 1986, vol. 74, pp. 172–180.

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