Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process
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4. A critical appraisal of growth mechanisms in MOVPE
5. Thermodynamic aspects of OMVPE
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1. Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates;Journal of Physics: Photonics;2020-02-11
2. Immiscibility behind the metalorganic vapor phase epitaxy of InGaN;Japanese Journal of Applied Physics;2019-05-17
3. Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition;SN Applied Sciences;2019-05-17
4. Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers;Japanese Journal of Applied Physics;2017-06-19
5. A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions;Inorganic Materials;2017-04
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