Sip+‐nshallow junction fabrication using on‐axis Ga+implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99577
Reference7 articles.
1. Optimization of BF2+implanted and rapidly annealed junctions in silicon
2. Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon
3. Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
4. Abnormal solid solution and activation behavior in Ga‐implanted Si(100)
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