Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields-Reference-Cited by-同舟云学术

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Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields

Published:2014-05-07 Issue:17 Volume:115 Page:17D506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Breitkreutz Stephan,Eichwald Irina,Kiermaier Josef,Hiblot Gaspard,Csaba Gyorgy,Porod Wolfgang,Schmitt-Landsiedel Doris,Becherer Markus

Funder

DFG

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4864737

Reference11 articles.

1. M. Bechereret al., in Digest Technical Papers IEEE International Solid-State Circuits Conference (ISSCC)2009, 474–475.

2. Experimental Demonstration of a 1-Bit Full Adder in Perpendicular Nanomagnetic Logic

3. S. Breitkreutzet al., “1-Bit full adder in perpendicular nanomagnetic logic using a novel 5-input majority gate,” in Proceedings of the Joint European Magnetic Symposia (JEMS) (2013), Greece.

4. Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy

5. Controlled pinning and depinning of domain walls in nanowires with perpendicular magnetic anisotropy

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