Wide range doping controllability of p-type GaN films prepared via pulsed sputtering-Reference-Cited by-同舟云学术

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Published:2019-01-21 Issue:3 Volume:114 Page:032102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fudetani Taiga¹,Ueno Kohei¹^ORCID,Kobayashi Atsushi¹^ORCID,Fujioka Hiroshi¹²

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

2. ACCEL, Japan Science and Technology Agency (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan

Funder

Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079673

Reference25 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

4. Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

5. H. Ishida , R. Kajitani , Y. Kinoshita , H. Umeda , S. Ujita , M. Ogawa , K. Tanaka , T. Morita , S. Tamura , M. Ishida , and T. Ueda , in International Electron Devices Meeting (IEEE, 2016), pp. 20.4.1–20.4.4.

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