Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654197
Reference7 articles.
1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
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4. Alpha-Particle Stopping Cross Section in Solids from 400 keV to 2 MeV
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