Assessment of conduction mechanisms through MgO ultrathin barriers in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

Assessment of conduction mechanisms through MgO ultrathin barriers in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions

Published:2019-03-11 Issue:10 Volume:114 Page:102402
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lv Hua¹²^ORCID,Fidalgo Joao¹²,Silva Ana V.¹,Leitao Diana C.¹²^ORCID,Kampfe Thomas³,Riedel Stefan³,Langer Juergen⁴^ORCID,Wrona Jerzy⁴,Ocker Berthold⁴^ORCID,Freitas Paulo P.¹,Cardoso Susana¹²

Affiliation:

1. INESC - Microsistemas e Nanotecnologias, 1000-029 Lisboa, Portugal

2. Instituto Superior Tecnico (IST), Universidade de Lisboa, 1049-001 Lisboa, Portugal

3. Fraunhofer Institute for Photonic Microsystems IPMS, 01099 Dresden, Germany

4. Singulus Technologies AG, 63796 Kahl am Main, Germany

Funder

Fundação para a Ciência e a Tecnologia

Electronic Components and Systems for European Leadership

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5087952

Reference22 articles.

1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2. Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

3. Spintronics based random access memory: a review

4. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

5. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

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