Dynamic self-organization of strained islands during SiGe epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122049
Reference14 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Crack-Like Sources of Dislocation Nucleation and Multiplication in Thin Films
5. Competing relaxation mechanisms in strained layers
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