Demonstration of a new tool for degradation of amorphous hydrogenated silicon and the importance of the Fermi level shift
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109602
Reference17 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Saturation of the light‐induced defect density in hydrogenated amorphous silicon
3. Fast metastable defect-creation in amorphous silicon by femtosecond light pulses
4. A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network
5. Deposition of device quality, lowHcontent amorphous silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light induced defects in sputtered amorphous silicon thin films;Materials Chemistry and Physics;2002-04
2. Investigation of the spatial distribution of dangling bonds in light-soaked hydrogenated amorphous silicon;Physical Review B;1996-03-15
3. Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect;Journal of Applied Physics;1995-04-15
4. Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration;Japanese Journal of Applied Physics;1995-01-15
5. Pulsed-light soaking of hydrogenated amorphous silicon;Physical Review B;1994-10-15
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