Self‐consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336898
Reference9 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Iteration methods for calculating self-consistent fields in semiconductor inversion layers
3. Self-Consistent Results forn-Type Si Inversion Layers
4. Integrals of products of Airy functions
5. Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity Scattering
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