Investigations of Stranski-Krastanov growth kinetics of Si-dots on 6H-SiC(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120236
Reference17 articles.
1. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. InAs/GaAs quantum dots radiative recombination from zero-dimensional states
4. InAs-GaAs quantum dots: From growth to lasers
5. Surface Diffusion Coefficients on Stranski-Krastanov Layers
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1. Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates;RSC Advances;2016
2. Preferential growth of Si films on 6H-SiC(0001) C-face;Applied Surface Science;2012-11
3. References;Plasma Nanoscience;2008-08-13
4. Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC;Materials Science Forum;2005-05
5. Si ADSORPTION ON SiC(0001) SURFACES;Surface Review and Letters;2003-12
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