Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory-Reference-Cited by-同舟云学术

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Published:2013-12-21 Issue:23 Volume:114 Page:234503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Y.,Zhong Y. P.,Deng Y. F.,Zhou Y. X.,Xu L.,Miao X. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4852995

Reference19 articles.

1. The parallel approach

2. Memristive devices for computing

3. Towards a universal memory?

4. Overview of candidate device technologies for storage-class memory

5. D. H. K. D. H. Ahm, J. H. Park, S. L. Cho, H. Horii, S. W. Jung, J. H. Park, Z. Wu, J. K. Ahn, Y. W. Park, J. U. Kim, J. M. Lee, S. W. Nam, H. K. Kang, and E. S. Jung, in Proceedings of the European Phase Change and Ovonics Symposium (E\PCOS) (Berlin, Germany, 2013), p. 61.

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