Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory-Reference-Cited by-同舟云学术

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Published:2023-02-08 Issue:2 Volume:5 Page:1041-1049
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Tian Guoliang¹²^ORCID,Chen Jia¹²,Yan Gangping¹²^ORCID,Li Lianlian¹²,Song Zhiyu¹²,Yang Shangbo¹²,Zhang Zhaohao¹²^ORCID,Xu Gaobo¹²,Yin Huaxiang¹²³^ORCID,Yang Shuai¹²,Luo Yanna¹²,Bi Jinshun¹²,Wu Zhenhua¹²,Wang Guilei⁴,Zhao Chao⁴,Luo Jun¹²³,Wang Wenwu¹²

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China

2. School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

3. Binzhou Weiqiao Advanced Technology Institute of UCAS, Shandong 256600, People’s Republic of China

4. Beijing Superstring Academy of Memory Technology, Beijing 100176, People’s Republic of China

Funder

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

National Science and Technology Major Project

Beijing Superstring Academy of Memory Technology

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect , Northwest Institute of Nuclear Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01542

Reference23 articles.

1. A Logic-in-Memory Computer

2. Logic-in-memory based on an atomically thin semiconductor

3. Breyer, E.; Mulaosmanovic, H.; Mikolajick, T.; Slesazeck, S. In Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology, 2017 IEEE International Electron Devices Meeting (IEDM); IEEE: 2017; pp 28.5.1–28.5.4.

4. Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

5. Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

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