Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions

Published:2017-03-03 Issue:5 Volume:7 Page:055932
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Gopman D. B.¹,Dennis C. L.¹,McMichael R. D.²,Hao X.³,Wang Z.³,Wang X.³,Gan H.³,Zhou Y.³,Zhang J.³,Huai Y.³

Affiliation:

1. Materials Science and Engineering Division, NIST, Gaithersburg, Maryland 20899, USA

2. Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA

3. Avalanche Technology, Fremont, California 95438, USA

Funder

National Institute of Standards and Technology Nanofabrication Facility

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference13 articles.

1. Y. Huai, J. Zhang, Y. Zhou, X. Wang, E. Abedifard, Z. Wang, X. Hao, D. Jung, K. Satoh, H. Gan et al., in 2015 IEEE Magnetics Conference (INTERMAG) (2015), pp. 1–1, ISSN 2150-4598.

2. A new spin on magnetic memories

3. Evolution of perpendicular magnetized tunnel junctions upon annealing

4. Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies

5. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

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