Experimental formation of monolayer group-IV monochalcogenides
Author:
Affiliation:
1. Beijing Academy of Quantum Information Sciences, Beijing 100193, China
2. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0012300
Reference111 articles.
1. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
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4. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
5. Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides
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