Effect on electrical properties of segregation of implanted P+at defect sites in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92038
Reference6 articles.
1. A three-stage model for the development of secondary defects in ion-implanted silicon
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5. Structural and electrical profiles for double damage layers in ion-implanted silicon
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1. Damage accumulation in neon implanted silicon;Journal of Applied Physics;2006-08-15
2. Ion-beam-induced amorphization and recrystallization in silicon;Journal of Applied Physics;2004-12
3. The influence of sinks of intrinsic point defects on phosphorus diffusion in Si;Semiconductors;2002-11
4. Structural and electrical characterization of Si(100) implanted with P+ and Si+ ions along the [100] channelling direction;Materials Science and Engineering: B;1990-09
5. Reduction of secondary defect formation in MeV B+ion‐implanted Si (100);Applied Physics Letters;1989-10-30
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