Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge-Reference-Cited by-同舟云学术

Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge

Published:2020-06-01 Issue:6 Volume:10 Page:065015
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Zhangcheng¹,Yi Wenyang¹,Zhao Dan¹^ORCID,Abbasi Haris Naeem¹,Min Tai²,Wang Hong-Xing¹^ORCID

Affiliation:

1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

2. Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Funder

National Natural Science Foundation of China

Dongguan Introdution Program of Leading Innovative and Entrepreneurial

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009883

Reference16 articles.

1. Ultrashort electrical pulses open a new gateway into biological cells

2. Phenol Degradation by a Nonpulsed Diaphragm Glow Discharge in an Aqueous Solution

3. The Driving Conditions for Obtaining Subnanosecond High-Voltage Pulses From a Silicon-Avalanche-Shaper Diode

4. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation;Micromachines;2023-08-26

2. Simulation of Pulse Sharpening Mechanism of Vertical Diamond Avalanche Diode;IEEE Transactions on Electron Devices;2023-04