Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119475
Reference5 articles.
1. Ferroelectric field‐effect memory device using Bi4Ti3O12film
2. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films
3. Pulsed laser ablation synthesis and characterization of layered Pt/SrBi2Ta2O9/Pt ferroelectric capacitors with practically no polarization fatigue
4. Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
5. Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method
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1. Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices;Journal of Applied Physics;2008-09-15
2. Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2as buffer layer;Journal of Physics D: Applied Physics;2008-04-07
3. Engineering of molecular architectures of β-diketonate precursors toward new advanced materials;Coordination Chemistry Reviews;2007-07
4. Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System;Chemistry of Materials;2006-01-28
5. Plasma-Enhanced Atomic Layer Deposition of SrTa[sub 2]O[sub 6] Thin Films Using Sr[Ta(OC[sub 2]H[sub 5])[sub 5](OC[sub 2]H[sub 4]OCH[sub 3])][sub 2] as Precursor;Journal of The Electrochemical Society;2004
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