Semi‐insulating properties of Fe‐doped InP grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343611
Reference13 articles.
1. Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition
2. Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy
3. Semi‐insulating properties of Fe‐implanted InP. I. Current‐limiting properties ofn+‐semi‐insulating‐n+structures
4. A study of Fe-dopants for growth of semi-insulating InP by MOCVD
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe;Journal of Electronic Materials;2001-08
2. Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP;Journal of Applied Physics;2001-04
3. Hydride vapor phase epitaxy revisited;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
4. Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy;Materials Science and Engineering: B;1991-11
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