A study of Fe-dopants for growth of semi-insulating InP by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Growth of Fe-doped semi-insulating InP by MOCVD
2. Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition
3. Vapor pressure and third-law entropy of ferrocene
4. The Vapor Pressure of Iron Pentacarbonyl
5. Vapor growth of InP for MESFET’S
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1. Iron Thin Films from Fe(CO)[sub 5] and FeCp[sub 2]∕H[sub 2]O under Atmospheric Pressure;Journal of The Electrochemical Society;2006
2. Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers;Applied Physics Letters;2002-01-21
3. Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP;Journal of Applied Physics;2001-04
4. Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films;Thin Solid Films;1999-02
5. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999
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