Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Author:

Ren Kun12ORCID,Li Ruiheng1,Chen Xin23,Wang Yong23,Shen Jiabin23,Xia Mengjiao4,Lv Shilong2,Ji Zhenguo1,Song Zhitang1

Affiliation:

1. College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China

2. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China

3. Graduate University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China

4. International Laboratory of Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China

Funder

national key research and development program of China

strategic priority research program of Chinese academy of science

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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