Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2959829
Reference14 articles.
1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
2. Surface Recombination Currents in “Type-II” NpN InP–GaAsSb–InP Self-Aligned DHBTs
3. Schottky diodes of Au on GaAs/sub 1-x/Sb/sub x//GaAs n-N heterostructures grown by MBE
4. F. H. Pollak, Handbook on Semiconductors, edited by M. Balkanski (North Holland, Amsterdam, 1994), Vol. 2, p. 527.
5. Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration
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