Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2362600
Reference15 articles.
1. Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions
2. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2
3. 1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide
4. Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides
5. Refractive index dependence of the absorption and emission cross sections at 1.54μm of Er3+ coupled to Si nanoclusters
Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Sensitized electroluminescence from erbium doped silicon rich oxynitride light emitting devices;Journal of Luminescence;2021-07
2. Efficient sensitized photoluminescence of Er silicate in silicon oxide films embedded with amorphous silicon clusters, part II: photoluminescence;Optical Materials Express;2019-10-16
3. Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films;Journal of Materials Science;2019-06-25
4. Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer;Nanotechnology;2018-11-21
5. Chapter 13 Nanostructured Silicon Light Emitters;Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed;2016-08-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3