Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3518070
Reference19 articles.
1. Suppression of boron transport out of p[sup +] polycrystalline silicon at polycrystalline silicon dielectric interfaces
2. Degradation of oxynitride gate dielectric reliability due to boron diffusion
3. Reliability Physics Symposium;Kim B.,1997
4. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons
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3. Femtosecond laser diagnostics of the built-in electric field across the p+-Si/SiO2 interface and its ultrafast shielding;Journal of Applied Physics;2013-06-14
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