A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
Author:
Affiliation:
1. IBM Research Division, Essex Junction, Vermont 05452, USA
2. IBM Research Division, Yorktown Heights, New York, 19598, USA
3. IBM Research Division, Albany, New York 12203, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5141951
Reference13 articles.
1. In-memory computing with resistive switching devices
2. Causes and consequences of the stochastic aspect of filamentary RRAM
3. Statistical insight into controlled forming and forming free stacks for HfOx RRAM
4. Log-Normal Statistics in Filamentary RRAM Devices and Related Systems
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