Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires
Author:
Affiliation:
1. GdS Optronlab, Dpt. Física de la Materia Condensada, ed. LUCIA Universidad de Valladolid, Paseo de Belén 19, 47011 Valladolid, Spain
2. Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria
Funder
Ministerio de Educación, Cultura y Deporte
Comisión Interministerial de Ciencia y Tecnología
Consejería de Educación, Junta de Castilla y León
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5058276
Reference29 articles.
1. Nanowire electronic and optoelectronic devices
2. High Performance Silicon Nanowire Field Effect Transistors
3. Ge/Si nanowire heterostructures as high-performance field-effect transistors
4. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
5. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity
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