Hot-electron characteristics in chemically resolved electrical measurements of thin silica and SiON layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3141454
Reference19 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal
3. Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
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