Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1753065
Reference8 articles.
1. A new heterojunction gate GaAs FET
2. Empirical molecular dynamic study of SiC(0001) surface reconstructions and bonded interfaces
3. Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces
4. Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration
5. Electrical conduction through compound semiconductor wafer bonded interfaces
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2. Single-crystalline SiC integrated onto Si-based substrates via plasma-activated direct bonding;Ceramics International;2020-10
3. Temporary SiC-SiC Wafer Bonding Compatible with High Temperature Annealing;2019 IEEE 69th Electronic Components and Technology Conference (ECTC);2019-05
4. A facile method for direct bonding of single-crystalline SiC to Si, SiO2, and glass using VUV irradiation;Applied Surface Science;2019-03
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