Empirical molecular dynamic study of SiC(0001) surface reconstructions and bonded interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1328783
Reference33 articles.
1. A critical review of ohmic and rectifying contacts for silicon carbide
2. Progress in SiC: from material growth to commercial device development
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4. Ab initiocalculation of structural and lattice-dynamical properties of silicon carbide
5. Epitaxial growth of SiC-heterostructures on α-SiC(0001) by solid-source MBE
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1. Evolution of Microstructure during Rapid Solidification of SiC under High Pressure;Advances in Condensed Matter Physics;2022-02-23
2. MICROSTRUCTURAL EVOLUTION OF SiC DURING MELTING PROCESS;Modern Physics Letters B;2013-12-03
3. Advances in silicon carbide science and technology at the micro- and nanoscales;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09
4. Melting kinetics of bulk SiC using molecular dynamics simulation;Science China Physics, Mechanics and Astronomy;2013-07-25
5. Structural Properties of Liquid SiC during Rapid Solidification;The Scientific World Journal;2013
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