The origin of 0.78 eV line of the dislocation related luminescence in silicon
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4754825
Reference20 articles.
1. Dislocation-related photoluminescence in silicon
2. On the nature of the dislocation luminescence in silicon
3. Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates
4. Time-resolved measurements of dislocation-related photoluminescence bands in silicon
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