Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3202392
Reference13 articles.
1. Identifying Performance-Critical Defects in the High-k/Metal Gate Stacks
2. Electron Trap Generation in High-$kappa$Gate Stacks by Constant Voltage Stress
3. Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
4. Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation
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1. The study of interface quality in HfO2/Si films probed by second harmonic generation;Journal of Physics D: Applied Physics;2024-07-22
2. The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation;Materials;2024-07-13
3. Influence of the SiO2 interlayer thickness on the density and polarity of charges in Si/SiO2/Al2O3 stacks as studied by optical second-harmonic generation;Journal of Applied Physics;2014-01-21
4. Second-Order Nonlinear Optical Microscopy of a H–Si(111)1 × 1 Surface in Ultra-High Vacuum Conditions;Physics Research International;2012-04-11
5. Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission;physica status solidi (b);2012-04-04
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