Low threshold current lead‐telluride diode lasers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Low threshold current lead‐telluride diode lasers grown by molecular beam epitaxy

Published:1981-03 Issue:3 Volume:52 Page:1579-1582
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Partin Dale L.¹,Lo Wayne¹

Affiliation:

1. Physics Department, General Motors Research Laboratories, Warren, Michigan 48090

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference7 articles.

1. H. Preier, Appl. Phys. 20, 189 (1979).APHYCC0340-3793

2. H. Holloway and J. N. Walpole, Prog. Cryst. Growth Charac. 2, 49 (1979).PCGCDG0960-8974

3. D. Kasemset and C. G. Fonstad, Appl. Phys. Lett. 34, 432 (1979).APPLAB0003-6951

4. W. Lo, J. Quantum Electron. QE‐13, 591 (1977).

5. D. L. Smith and V. Y. Pickhardt, J. Electrochem. Soc. 125, 2042 (1978).JESOAN0013-4651

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