Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates-Reference-Cited by-同舟云学术

Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Published:2009-11-11 Issue:1 Volume:10 Page:109-113
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Dziawa P.¹,Sadowski J.¹²,Dluzewski P.¹,Lusakowska E.¹,Domukhovski V.¹,Taliashvili B.¹,Wojciechowski T.¹,Baczewski L. T.¹,Bukala M.¹,Galicka M.¹,Buczko R.¹,Kacman P.¹,Story T.¹

Affiliation:

1. Institute of Physics PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

2. MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg900575r

Reference47 articles.

1. One-dimensional Steeplechase for Electrons Realized

2. Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type

3. General Synthesis of Compound Semiconductor Nanowires

4. Solid-phase diffusion mechanism for GaAs nanowire growth

5. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

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