Behavior of downstream plasmas generated in a microwave plasma chemical‐vapor deposition reactor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342467
Reference15 articles.
1. Effects of substrate bias on structure and properties of a-Si:H films deposited by ECR microwave plasmas
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5. Investigation of the amorphous‐to‐microcrystalline transition of hydrogenated silicon films by spectroscopic ellipsometry
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1. Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones;Boletín de la Sociedad Española de Cerámica y Vidrio;2004-04-30
2. Compositional analysis of thin SiOxNy:H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-04
3. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiO2/SiNxand SiOxNyDielectric Films on Silicon Substrates;Japanese Journal of Applied Physics;2004-01-13
4. Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHzFilms;Japanese Journal of Applied Physics;2003-08-15
5. Bonding configuration and density of defects of SiO[sub x]H[sub y] thin films deposited by the electron cyclotron resonance plasma method;Journal of Applied Physics;2003
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