Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy-Reference-Cited by-同舟云学术

Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy

Published:2008-08-11 Issue:6 Volume:93 Page:062102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matsuki Nobuyuki,Ishihara Ryoichi,Baiano Alessando,Beenakker Kees

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2968663

Reference23 articles.

1. Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics

2. Ultra-large grain growth of Si films on glassy substrate

3. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

4. Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing

5. On the super lateral growth phenomenon observed in excimer laser‐induced crystallization of thin Si films

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of Large Grain Size Polysilicon Using Long-Pulse Green Laser Annealing for 3-D Integration Technology;IEEE Transactions on Electron Devices;2024-03

2. Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator;Applied Physics Letters;2020-10-26

3. Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate;ACS Applied Energy Materials;2018-09-17

4. Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping;Japanese Journal of Applied Physics;2018-03-20

5. Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region;ECS Solid State Letters;2014-03-19