Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells-Reference-Cited by-同舟云学术

Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells

Published:2019-06-10 Issue:23 Volume:114 Page:232102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shibata K.¹²,Karalic M.¹,Mittag C.¹,Tschirky T.¹^ORCID,Reichl C.¹,Ito H.²,Hashimoto K.³⁴,Tomimatsu T.³,Hirayama Y.³⁴⁵^ORCID,Wegscheider W.¹,Ihn T.¹,Ensslin K.¹

Affiliation:

1. Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

2. Tohoku Institute of Technology, Sendai 982-8577, Japan

3. Graduate School of Science, Tohoku University, Sendai 980-8578, Japan

4. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

5. Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Sendai 980-8577, Japan

Funder

Grant-in-Aid from JSPS

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093133

Reference34 articles.

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4. Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

5. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

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