Investigation of the mechanism of Ar+ion‐assisted Cl2etching of GaAs{110}: Role of ion‐induced charge acceptor states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349542
Reference53 articles.
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5. Characterization of ion beam etching induced defects in GaAs
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