Ridge formation for AlGaAs GRINSCH lasers by Cl/sub 2/ reactive ion etching

Author:

Jost M.,Bona G.L.,Buchmann P.,Sasso G.,Vettiger P.,Webb D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000

2. High-power 0.98-/spl mu/m strained quantum-well lasers fabricated using in situ monitored reactive ion beam etching;IEEE Photonics Technology Letters;1995-06

3. Improved epitaxial layer design for real‐time monitoring of dry etching in III–V compound heterostructures with depth accuracy of ±8 nm;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07

4. Reactive ion etching of AlInGaP and GaAs in SiCl4/CH4/Ar-based plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03

5. Optical gain anisotropy in serpentine superlattice nanowire‐array lasers;Applied Physics Letters;1993-10-11

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