Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893608
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1. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
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4. Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces
5. High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy
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