Thermal performance of GaInSb quantum well lasers for silicon photonics applications
Author:
Affiliation:
1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7HX, United Kingdom
2. IES, Université de Montpellier, CNRS, F-34000 Montpellier, France
Funder
Engineering and Physical Sciences Research Council
Agence Nationale de la Recherche
SEPnet PhD Scholarship
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0042667
Reference20 articles.
1. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
2. Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
3. GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$m at Room Temperature
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1. Improving the quality and properties of GaInSb crystal with Al doping;Physica Scripta;2024-02-22
2. Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon;IEEE Journal of Selected Topics in Quantum Electronics;2022-01
3. Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001);2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10
4. Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118, 101105 (2021)];Applied Physics Letters;2021-05-03
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