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Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

  • Published:2015-05-25 Issue:21 Volume:106 Page:213102
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Grenier A.12,Duguay S.3,Barnes J. P.12,Serra R.12,Rolland N.3,Audoit G.12,Morin P.4,Gouraud P.4,Cooper D.12,Blavette D.3,Vurpillot F.3

Affiliation:

1. Univ. Grenoble Alpes, F-38000 Grenoble, France

2. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

3. GPM UMR 6634 CNRS, Avenue de l'Université, 76801 Saint Etienne du Rouvray, France

4. STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles, France

Funder

French National Research Agency

Recherche Technologique de Base

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metrology;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11

2. Position artifacts in 3D reconstruction of plate‐shaped precipitates in steels depending on the analysis direction of atom probe tomography;Surface and Interface Analysis;2021-08-09

3. Correlative STEM-HAADF and STEM-EDX tomography for the 3D morphological and chemical analysis of semiconductor devices;Semiconductor Science and Technology;2021-01-22

4. A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy;Review of Scientific Instruments;2020-08-01

5. Site-Specific Sample Preparation and Analysis of FinFET structure in 14nm Technology Node Chip via Atom Probe Tomography;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20
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