Phase change memory cell using tungsten trioxide bottom heating layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2939218
Reference11 articles.
1. S. M. Sadeghipour, L. Pileggi, and M. Asheghi, The Tenth Intersociety Conference on ITHERM (IEEE, New York, 2006) pp. 660–665.
2. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)
3. Three-dimensional simulation model of switching dynamics in phase change random access memory cells
4. Thermal Conductivity Measurement of Tungsten Oxide Nanoscale Thin Films
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