Experimental identification of the energy level of substitutional manganese in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339217
Reference23 articles.
1. Transition metals in silicon
2. Theory of substitutional and interstitial3dimpurities in silicon
3. Electronic structure of transition-atom impurities in semiconductors: Substitutional3dimpurities in silicon
4. Level positions of interstitial transition-metal impurities in silicon
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1. Charge transition levels of Mn-doped Si calculated with the GGA-1/2 method;Physical Review B;2014-12-03
2. Electronic properties and dopant pairing behavior of manganese in boron-doped silicon;Journal of Applied Physics;2007-11-15
3. Transition metal co-precipitation mechanisms in silicon;Acta Materialia;2007-10
4. Recombination activity of manganese in p- and n-type crystalline silicon;Semiconductor Science and Technology;2007-01-09
5. Optical properties and deep levels in annealed Si1−xMnx bulk materials;Solid State Communications;2006-10
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