Charge transition levels of Mn-doped Si calculated with the GGA-1/2 method-Reference-Cited by-同舟云学术

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Charge transition levels of Mn-doped Si calculated with the GGA-1/2 method

Published:2014-12-03 Issue:22 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Matusalem Filipe,Pelá Ronaldo R.,Marques Marcelo,Teles Lara K.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

São Paulo Research Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.224102/fulltext

Reference76 articles.

1. Silicon-based spintronics

2. Investigation on the magnetic and electrical properties of crystalline Mn0.05Si0.95 films

3. Surfactant-mediated growth of ferromagnetic Mnδ-doped Si

4. Magnetic and optical properties of Mn-implanted Si material

5. Electronic and magnetic structure of 3d–transition-metal point defects in silicon calculated from first principles

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