Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN-Reference-Cited by-同舟云学术

Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

Published:2021-03-28 Issue:12 Volume:129 Page:125105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Palmese Elia¹^ORCID,Peart Matthew R.¹^ORCID,Borovac Damir¹^ORCID,Song Renbo¹,Tansu Nelson²,Wierer Jonathan J.¹

Affiliation:

1. Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania, 18015, USA

2. School of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, Australia

Funder

National Science Foundation

Daniel E. '39 and Patricia M. Smith Endowed Chair Professorship Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0035711

Reference35 articles.

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3. Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers

4. Native oxide stabilization of AlAs‐GaAs heterostructures

5. Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

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