Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1988986
Reference23 articles.
1. SiGe field effect transistors
2. SiGe Technology: Heteroepitaxy and High-Speed Microelectronics
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
5. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
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