Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366126
Reference24 articles.
1. Void formation mechanism in VLSI aluminum metallization
2. Characterization of Plasma‐Deposited Silicon Dioxide
3. Comparison of properties of dielectric films deposited by various methods
4. A Review of infrared spectroscopic studies of vapor-deposited dielectric glass films on silicon
5. Reaction pathways and sources of OH groups in low temperature remote PECVD silicon dioxide thin films
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