Semiconducting nonperovskite ferroelectric oxynitride designed ab initio

Abstract

The recent discovery of HfO2-based and nitride-based ferroelectrics that are compatible to the semiconductor manufacturing process has revitalized the field of ferroelectric-based nanoelectronics. Guided by a simple design principle of charge compensation and density functional theory calculations, we discover that HfO2-like mixed-anion materials, TaON and NbON, can crystallize in the polar Pca 2 1 phase with a strong thermodynamic driving force to adopt anion ordering spontaneously. Both oxynitrides possess large remnant polarization, low switching barriers, and unconventional negative piezoelectric effect, making them promising piezoelectrics and ferroelectrics. Distinct from HfO2 that has a wide bandgap, both TaON and NbON can absorb visible light and have high charge carrier mobilities, suitable for ferroelectric photovoltaic and photocatalytic applications. This class of multifunctional nonperovskite oxynitride containing economical and environmentally benign elements offers a platform to design and optimize high-performing ferroelectric semiconductors for integrated systems.