Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2955461
Reference15 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
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3. Chemical and physical limits on the performance of metal silicate high-k gate dielectrics
4. Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics
5. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
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1. Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics;IEEE Transactions on Electron Devices;2022-01
2. Evidence of change in crystallization behavior of thin HfO2 on Si: Effects of self-formed SiO2 capping layer;Thin Solid Films;2014-04
3. Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature;physica status solidi (a);2013-08-28
4. Thermal stability of high-kSi-rich HfO2layers grown by RF magnetron sputtering;Nanotechnology;2010-06-28
5. Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001);The Journal of Chemical Physics;2008-10-28
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