Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607245
Reference31 articles.
1. The fabrication of GaN-based light emitting diodes (LEDs)
2. High efficiency GaN-based LEDs and lasers on SiC
3. Nitride-Based MIS-Like Photodiodes With Semiinsulating Mg-Doped GaN Cap Layers
4. Material optimisation for AlGaN/GaN HFET applications
5. Metal semiconductor field effect transistor based on single crystal GaN
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